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Semiconductor Interfaces: Formation and Properties

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Produktnummer: 18458f82ad575c442d9f502a5afca823bc
Themengebiete: development diffraction electronic properties microscopy optical properties optoelectronic devices production semiconductor spectroscopy transistor
Veröffentlichungsdatum: 06.12.2011
EAN: 9783642729690
Sprache: Englisch
Seitenzahl: 389
Produktart: Kartoniert / Broschiert
Herausgeber: Boccara, Nino Derrien, Jacques LeLay, Guy
Verlag: Springer Berlin
Untertitel: Proceedings of the Workkshop, Les Houches, France February 24–March 6, 1987
Produktinformationen "Semiconductor Interfaces: Formation and Properties"
The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.
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