Zum Hauptinhalt springen Zur Suche springen Zur Hauptnavigation springen
Haben Sie Fragen? Einfach anrufen, wir helfen gerne: Tel. 089/210233-0
oder besuchen Sie unser Ladengeschäft in der Pacellistraße 5 (Maxburg) 80333 München
+++ Versandkostenfreie Lieferung innerhalb Deutschlands
Haben Sie Fragen? Tel. 089/210233-0

Recent Advances in PMOS Negative Bias Temperature Instability

160,49 €*

Versandkostenfrei

Produktnummer: 18f930cb8fa424406e8f7138238bf3acf0
Themengebiete: Dimension Scaling FDSOI FinFET GAA-SNS FET HKMG Layout MOSFET NBTI SiGe channel Si channel
Veröffentlichungsdatum: 27.11.2022
EAN: 9789811661228
Sprache: Englisch
Seitenzahl: 311
Produktart: Kartoniert / Broschiert
Herausgeber: Mahapatra, Souvik
Verlag: Springer Singapore
Untertitel: Characterization and Modeling of Device Architecture, Material and Process Impact
Produktinformationen "Recent Advances in PMOS Negative Bias Temperature Instability"
This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses:  Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels.  BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and ACstress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency.  The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes.  Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
Bücherregal gefüllt mit juristischen Werken

Sie möchten lieber vor Ort einkaufen?

Sie haben Fragen zu diesem oder anderen Produkten oder möchten einfach gerne analog im Laden stöbern? Wir sind gerne für Sie da und beraten Sie auch telefonisch.

Juristische Fachbuchhandlung
Georg Blendl

Parcellistraße 5 (Maxburg)
8033 München

Montag - Freitag: 8:15 -18 Uhr
Samstags geschlossen