Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Produktnummer:
18d14dca5526b34bafb8a222972bab106f
| Themengebiete: | GaN Reliability GaN device physics GaN for Power Conversion GaN transistors Gallium Nitride |
|---|---|
| Veröffentlichungsdatum: | 24.05.2018 |
| EAN: | 9783319779935 |
| Sprache: | Englisch |
| Seitenzahl: | 232 |
| Produktart: | Gebunden |
| Herausgeber: | Meneghesso, Gaudenzio Meneghini, Matteo Zanoni, Enrico |
| Verlag: | Springer International Publishing |
Produktinformationen "Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion"
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies.
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