Ferroelectric Random Access Memories
Produktnummer:
18302972c3e0e448c8af93d4bf758ac6db
| Themengebiete: | Ferroelectric RAM High Density Metals and Alloys Random Access Memory Semiconductors alloy circuit design liquid material metals |
|---|---|
| Veröffentlichungsdatum: | 03.12.2010 |
| EAN: | 9783642073847 |
| Sprache: | Englisch |
| Seitenzahl: | 291 |
| Produktart: | Kartoniert / Broschiert |
| Herausgeber: | Arimoto, Yoshihiro Ishiwara, Hiroshi Okuyama, Masanori |
| Verlag: | Springer Berlin |
| Untertitel: | Fundamentals and Applications |
Produktinformationen "Ferroelectric Random Access Memories"
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.
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